发明授权
US09263285B2 Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin
有权
用于形成含有含羟基的咔唑酚醛清漆树脂的抗蚀剂下层膜的组合物
- 专利标题： Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin
- 专利标题（中）： 用于形成含有含羟基的咔唑酚醛清漆树脂的抗蚀剂下层膜的组合物
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申请号： US13992864申请日： 2011-12-05
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公开(公告)号： US09263285B2公开(公告)日： 2016-02-16
- 发明人: Tetsuya Shinjo , Hiroaki Okuyama , Keisuke Hashimoto , Yasunobu Someya , Ryo Karasawa , Masakazu Kato
- 申请人： Tetsuya Shinjo , Hiroaki Okuyama , Keisuke Hashimoto , Yasunobu Someya , Ryo Karasawa , Masakazu Kato
- 申请人地址： JP Tokyo
- 专利权人： NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人： NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2010-275020 20101209
- 国际申请： PCT/JP2011/078088 WO 20111205
- 国际公布： WO2012/077640 WO 20120614
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/308 ; C09D139/04 ; H01L21/027 ; G03F7/09 ; G03F7/004
摘要：
There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.
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