公开(公告)号：US09263285B2

公开(公告)日：2016-02-16

申请号：US13992864

申请日：2011-12-05

申请人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

发明人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

IPC分类号： H01L21/302 ,  H01L21/308 ,  C09D139/04 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004

CPC分类号： H01L21/3081 ,  C09D139/04 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0271

摘要： There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

摘要翻译： 提供了一种用于形成半导体器件制造中用于光刻工艺的具有耐热性的抗蚀剂下层膜的组合物。 一种形成抗蚀剂下层膜的组合物，其含有以式（1）的单元结构的聚合物和式（2）的单元结构，其比例为3至97:97至3的摩尔比。 半导体器件，包括以下步骤：使用在半导体衬底上形成抗蚀剂下层膜的组合物形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 形成图案化的抗蚀剂膜并显影; 根据图案化的抗蚀剂膜蚀刻硬掩模; 根据图案化的硬掩模蚀刻下层膜; 以及根据图案化的下层膜处理半导体衬底。

公开(公告)号：US20130280913A1

公开(公告)日：2013-10-24

申请号：US13992864

申请日：2011-12-05

申请人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

发明人： Tetsuya Shinjo ,  Hiroaki Okuyama ,  Keisuke Hashimoto ,  Yasunobu Someya ,  Ryo Karasawa ,  Masakazu Kato

IPC分类号： H01L21/308 ,  H01L21/027 ,  C09D139/04

CPC分类号： H01L21/3081 ,  C09D139/04 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0271

摘要： There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

摘要翻译： 提供了一种用于形成半导体器件制造中用于光刻工艺的具有耐热性的抗蚀剂下层膜的组合物。 一种形成抗蚀剂下层膜的组合物，其含有以式（1）的单元结构的聚合物和式（2）的单元结构，其比例为3至97:97至3的摩尔比。 半导体器件，包括以下步骤：使用在半导体衬底上形成抗蚀剂下层膜的组合物形成下层膜; 在下层膜上形成硬掩模; 进一步在硬掩模上形成抗蚀剂膜; 形成图案化的抗蚀剂膜并显影; 根据图案化的抗蚀剂膜蚀刻硬掩模; 根据图案化的硬掩模蚀刻下层膜; 以及根据图案化的下层膜处理半导体衬底。

公开(公告)号：US20140106570A1

公开(公告)日：2014-04-17

申请号：US14116157

申请日：2012-05-18

申请人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

发明人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  G03F7/091 ,  G03F7/094

摘要： Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.

摘要翻译： 通常，在去除时使用灰化，本发明提供了一种用于形成可由碱性水溶液除去的有机硬掩模的材料，因此可以预期在此时减少对基材的损伤 的删除。 一种形成有机硬掩模层的组合物，包括：包含式（1）的结构单元和式（2）的结构单元的聚合物（A） 包含至少两个封端异氰酸酯基团，羟甲基或C 1-5烷氧基甲基的交联性化合物（B） 和溶剂（C），其中在使用多层膜的光刻工艺中，在最下层使用由用于形成有机硬掩模层的组合物获得的有机硬掩模层，其中R1至R4具有与 在规范中。

公开(公告)号：US09514949B2

公开(公告)日：2016-12-06

申请号：US14116157

申请日：2012-05-18

申请人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

发明人： Yasunobu Someya ,  Yuki Usui ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Ryo Karasawa

IPC分类号： G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/308

CPC分类号： H01L21/3081 ,  G03F7/091 ,  G03F7/094

摘要： Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.

公开(公告)号：US20130189533A1

公开(公告)日：2013-07-25

申请号：US13825925

申请日：2011-10-07

申请人： Hiroaki Okuyama ,  Yasunobu Someya ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto

发明人： Hiroaki Okuyama ,  Yasunobu Someya ,  Masakazu Kato ,  Tetsuya Shinjo ,  Keisuke Hashimoto

IPC分类号： G03F7/09 ,  H01L21/308

CPC分类号： G03F7/11 ,  C08G65/4006 ,  C08G65/4012 ,  C08G2650/40 ,  C08L71/00 ,  C09D171/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/2059 ,  G03F7/32 ,  H01L21/308 ,  H01L21/3086 ,  Y10T428/31942

摘要： There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): O—Ar1  Formula (1) (in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): O—Ar2—O—Ar3-T-Ar4  Formula (2) (in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.

摘要翻译： 提供了形成具有耐热性和硬掩模特性的抗蚀剂下层膜的抗蚀剂下层膜形成用组合物。 一种用于光刻的抗蚀剂下层膜形成组合物，其包含：含有式（1）的单元结构的聚合物：（1）（式（1）中，Ar 1为C 6-50亚芳基或有机 （2）的单元结构：式（2）中的：单价结构：式（2）中，Ar 2，Ar 3和Ar 4分别为C 6〜 -50亚芳基或含有杂环基的有机基团，T为羰基或磺酰基），或式（1）的单元结构与式（2）的单元结构的组合。 含有亚芳基的Ar 1和Ar 2的有机基团可以是含有芴结构的有机基团。

公开(公告)号：US20120142285A1

公开(公告)日：2012-06-07

申请号：US13308637

申请日：2011-12-01

申请人： Sunao Tsuchida ,  Masakazu Kato ,  Jun Yaginuma

发明人： Sunao Tsuchida ,  Masakazu Kato ,  Jun Yaginuma

IPC分类号： H04B1/44 ,  H01Q3/24 ,  H04B1/06

CPC分类号： H04B7/0691 ,  H01Q3/24 ,  H01Q3/2605

摘要： According to one embodiment, an antenna switching system includes a (a≧3) antennas and a selector. The selector selects b1 (2≦b1

摘要翻译： 根据一个实施例，天线切换系统包括（a≥3）天线和选择器。 选择器在第一定时从天线中选出b1（2＆nlE; b1

公开(公告)号：US20110156985A1

公开(公告)日：2011-06-30

申请号：US12864719

申请日：2009-02-05

申请人： Tomonori Sugiyama ,  Naohiro Matsushita ,  Masakazu Kato ,  Sadatoshi Oishi ,  Jun Yaginuma ,  Sunao Tsuchida

发明人： Tomonori Sugiyama ,  Naohiro Matsushita ,  Masakazu Kato ,  Sadatoshi Oishi ,  Jun Yaginuma ,  Sunao Tsuchida

IPC分类号： H01Q1/20 ,  H01Q1/27

CPC分类号： H01Q1/005 ,  H01Q1/1207 ,  H01Q1/27

摘要： A communication antenna device for use in radio communication between a moving body and an access point comprises an antenna main body for transmitting and receiving a signal, a base side member of the moving body for supporting the antenna main body, and a damping mechanism provided between the base side member and the antenna main body and suppressing high frequency vibration of the antenna main body that has an impact on the radio communication. The damping mechanism includes an elastic member for absorbing high frequency vibration that has an impact on the radio communication. The elastic member has such characteristics as absorbing high frequency vibration of the antenna main body that makes changes in amplitude or frequency of a transmission signal from the antenna main body to the extent of inducing a demodulation error when the transmission signal is received at an antenna of the other party.

摘要翻译： 用于移动体和接入点之间的无线电通信的通信天线装置包括用于发送和接收信号的天线主体，用于支撑天线主体的移动体的基座侧构件和设置在天线主体之间的阻尼机构， 基座侧构件和天线主体，抑制对无线通信具有影响的天线主体的高频振动。 阻尼机构包括用于吸收对无线电通信具有影响的高频振动的弹性部件。 弹性部件具有如下特征：吸收天线主体的高频振动，使天线主体的发送信号的振幅或频率发生变化，当发送信号在天线的天线被接收时，引起解调错误 对方。

公开(公告)号：US20100118017A1

公开(公告)日：2010-05-13

申请号：US12613126

申请日：2009-11-05

申请人： Junichi Yamashita ,  Masakazu Kato ,  Katsuhide Uchino

发明人： Junichi Yamashita ,  Masakazu Kato ,  Katsuhide Uchino

IPC分类号： G09G5/00 ,  H05B37/02 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G3/2018 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2320/046 ,  H05B33/0896

摘要： An organic electroluminescent light emitting unit driving method includes a process (a) to execute preprocessing, a process (b) to execute threshold voltage cancellation processing, a process (c) to execute writing processing, a process (d) to set a first node to a floating state, and a process (e) to execute a series of processes at least once wherein after driving an organic electroluminescent light emitting unit, a reverse voltage is applied between the anode and cathode electrodes of the organic electroluminescent light emitting unit, with a series of processes (a) through (e) being repeated, with an auxiliary driving process being provided wherein a forward voltage is applied between the anode and cathode electrodes of the organic electroluminescent light emitting unit over a certain period, and with a period between the termination of the auxiliary driving process and the termination of the next process (b) being suppressed to 1 millisecond or less.

摘要翻译： 有机电致发光单元驱动方法包括执行预处理的处理（a），执行阈值电压消除处理的处理（b），执行写入处理的处理（c），设置第一节点 以及至少一次执行一系列处理的处理（e），其中在驱动有机电致发光单元之后，在有机电致发光单元的阳极和阴极之间施加反向电压，与 通过提供辅助驱动方法来重复一系列方法（a）至（e），其中在一段时间内在有机电致发光单元的阳极和阴极之间施加正向电压，并且在 辅助驾驶过程的终止和下一个处理（b）的终止被抑制到1毫秒或更少。

公开(公告)号：US20100055773A1

公开(公告)日：2010-03-04

申请号：US12312517

申请日：2007-11-16

申请人： Kazuto Yamada ,  Naohito Iwata ,  Masakazu Kato ,  Ken-ichiro Hata ,  Akio Shirasu ,  Yoshihiro Yoshikawa ,  Atsushi Taguchi

发明人： Kazuto Yamada ,  Naohito Iwata ,  Masakazu Kato ,  Ken-ichiro Hata ,  Akio Shirasu ,  Yoshihiro Yoshikawa ,  Atsushi Taguchi

IPC分类号： C12M3/00 ,  C12M1/26

CPC分类号： C12M23/26 ,  C12M21/08 ,  C12M23/00 ,  C12M23/14 ,  C12M33/00

摘要： Under a state where the zipper 22 of a culture bag is opened, an operator depresses the opening button 43 of an arm 40 with one finger. Consequently, a force for oscillating the arm 40 to separate a retaining portion 49 upward from the culture surface 32 around a pin 42 acts against the urging force of a leaf spring 50. Consequently, the tip 52a of an extended portion 52 ascends to a predetermined position while resisting against the urging force of the leaf spring 50. Since the lower surface 20a of the culture bag 20 is retained by a base 31 and the upper surface 20b is raised upward by the tip 52a of an extended portion 52, opening 24 of the culture bag 20 is widened. Since the width of the base 31 is larger than that of the arm 40, upper space of the culture surface 32 is not occupied by the arm 40 and a sufficiently wide work space is provided in the culture bag 20.

摘要翻译： 在打开文化袋的拉链22的状态下，操作者用一根手指按压臂40的打开按钮43。 因此，用于使臂40摆动以将保持部分49从围绕销42的培养表面32向上分离的力抵抗板簧50的作用力作用。因此，延伸部分52的尖端52a上升到预定的 由于培养袋20的下表面20a被基部31保持，并且上表面20b被延伸部分52的尖端52a向上升高，所以上表面20b被延伸部分52的开口24 培养袋20变宽。 由于基部31的宽度大于臂40的宽度，培养面32的上部空间不被臂40占据，并且在培养袋20中设置足够宽的工作空间。

公开(公告)号：US07619466B2

公开(公告)日：2009-11-17

申请号：US11881876

申请日：2007-07-30

申请人： Sadatoshi Oishi ,  Nobuo Murofushi ,  Masakazu Kato

发明人： Sadatoshi Oishi ,  Nobuo Murofushi ,  Masakazu Kato

IPC分类号： H04L27/22

CPC分类号： H04L27/06 ,  H04L27/233

摘要： A quadrature demodulator includes a reception section which receives a signal transmitted by an RFID tag and containing a specific pattern and data following the specific pattern and multiplies the reception signal by a local signal to generate an I-signal, while multiplying the reception signal by the local signal shifted in phase by 90 degrees to generate a Q-signal, a first demodulating circuit which squares the I- and Q-signals and adding the resulting I- and Q-signals together to generate data on the basis of the addition result, a second demodulating circuit which detects the specific pattern in the I- and Q-signals to decode the data following one of the detected specific patterns, and a control section which selects one of the first and second demodulating circuits in accordance with a gain determined by the result of the addition between the values of the squared I- and Q-signals.

摘要翻译： 正交解调器包括接收部分，其接收由RFID标签发送的信号，并且包含特定模式和跟随特定模式的数据，并将接收信号乘以本地信号以产生I信号，同时将接收信号乘以 本地信号相移90度以产生Q信号，第一解调电路对I和Q信号进行平方并将所产生的I和Q信号相加在一起，以基于相加结果生成数据， 第二解调电路，其检测所述I和Q信号中的特定模式以解码所述检测到的特定模式之一之后的数据;以及控制部分，其根据由所述第一和第二解调电路确定的增益来选择所述第一和第二解调电路中的一个， 在I和Q信号的平方的值之间相加的结果。