Invention Grant
- Patent Title: Etch back processes of bonding material for the manufacture of through-glass vias
- Patent Title (中): 用于制造玻璃通孔的粘合材料的回蚀工艺
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Application No.: US14699393Application Date: 2015-04-29
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Publication No.: US09263300B2Publication Date: 2016-02-16
- Inventor: Chih-Wei Tsai , Bor Kai Wang
- Applicant: CORNING INCORPORATED
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent John T. Haran
- Main IPC: B23P15/00
- IPC: B23P15/00 ; C03C25/00 ; C23F1/00 ; H01L21/48 ; C03C15/00

Abstract:
A method for manufacturing vias in a glass substrate includes bonding, through a bonding layer, a first face of the glass substrate including a plurality of holes to a first face of a glass carrier. The bonding layer has a thickness t between the first face of the glass substrate and the first face of the glass carrier and extends into at least some of the plurality of holes to a depth h from the first face of the glass substrate. The method includes etching back the bonding layer to a depth d through the plurality of holes in the glass substrate. The depth d is less than the sum of the thickness t and the depth h. The method can include filling the plurality of holes with an electrically conductive material, and de-bonding the glass substrate from the bonding layer and the glass carrier.
Public/Granted literature
- US20150318187A1 ETCH BACK PROCESSES OF BONDING MATERIAL FOR THE MANUFACTURE OF THROUGH-GLASS VIAS Public/Granted day:2015-11-05
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