Invention Grant
US09263349B2 Printing minimum width semiconductor features at non-minimum pitch and resulting device
有权
以非最小间距打印最小宽度的半导体器件，从而产生器件
- Patent Title: Printing minimum width semiconductor features at non-minimum pitch and resulting device
- Patent Title (中): 以非最小间距打印最小宽度的半导体器件，从而产生器件
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Application No.: US14074981Application Date: 2013-11-08
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Publication No.: US09263349B2Publication Date: 2016-02-16
- Inventor: Sonia Ghosh , Randy Mann , Norman Chen , Shaowen Gao
- Applicant: GLOBALFOUNDRIES inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G03C5/00
- IPC: G03C5/00 ; H01L21/66 ; G06F17/50 ; H01L21/3213 ; H01L27/02
Abstract:
Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.
Public/Granted literature
- US20150130026A1 PRINTING MINIMUM WIDTH FEATURES AT NON-MINIMUM PITCH AND RESULTING DEVICE Public/Granted day:2015-05-14
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