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    GENERATING RISK INVENTORY AND COMMON PROCESS WINDOW FOR ADJUSTMENT OF MANUFACTURING TOOL
    1.
    发明申请
    GENERATING RISK INVENTORY AND COMMON PROCESS WINDOW FOR ADJUSTMENT OF MANUFACTURING TOOL 审中-公开

    公开(公告)号：US20190101905A1

    公开(公告)日：2019-04-04

    申请号：US15719680

    申请日：2017-09-29

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hongxin Zhang ,  Shaowen Gao ,  Norman Chen

    IPC: G05B19/418

    CPC classification number: G05B19/41845 ,  G05B2219/36089 ,  G05B2219/45031

    Abstract: Methods according to the disclosure include: converting an image of a manufactured circuit to a plurality of representative contours, the plurality of representative contours corresponding to printed features in the manufactured circuit; generating a risk inventory for the manufactured circuit based on the plurality of representative contours, the risk inventory being configured to identify at least one process sensitive geometry (PSG) in the manufactured circuit; generating a common process window (CPW) for the manufactured circuit based on the plurality of representative contours and the risk inventory, the CPW being indicative of manufacturing reliability of each feature in the manufactured circuit; and generating instructions to adjust a manufacturing tool for creating the manufactured circuit, based on the generated CPW.

    Generating risk inventory and common process window for adjustment of manufacturing tool
    3.
    发明授权
    Generating risk inventory and common process window for adjustment of manufacturing tool 有权

    公开(公告)号：US10401837B2

    公开(公告)日：2019-09-03

    申请号：US15719680

    申请日：2017-09-29

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hongxin Zhang ,  Shaowen Gao ,  Norman Chen

    IPC: G05B19/418 ,  G06F17/50

    Abstract: A method disclosed herein includes: converting an image of a manufactured circuit to a plurality of representative contours, the plurality of representative contours corresponding to printed features in the manufactured circuit; generating a risk inventory for the manufactured circuit based on the plurality of representative contours, the risk inventory being configured to identify at least one process sensitive geometry (PSG) in the manufactured circuit; generating a common process window (CPW) for the manufactured circuit based on the plurality of representative contours and the risk inventory, the CPW being indicative of manufacturing reliability of each feature in the manufactured circuit; and generating instructions to adjust a manufacturing tool for creating the manufactured circuit, based on the generated CPW.

    Printing minimum width semiconductor features at non-minimum pitch and resulting device
    5.
    发明授权
    Printing minimum width semiconductor features at non-minimum pitch and resulting device 有权
    以非最小间距打印最小宽度的半导体器件，从而产生器件

    公开(公告)号：US09263349B2

    公开(公告)日：2016-02-16

    申请号：US14074981

    申请日：2013-11-08

    Applicant: GLOBALFOUNDRIES inc.

    Inventor： Sonia Ghosh ,  Randy Mann ,  Norman Chen ,  Shaowen Gao

    IPC: G03C5/00 ,  H01L21/66 ,  G06F17/50 ,  H01L21/3213 ,  H01L27/02

    CPC classification number: H01L23/528 ,  G06F17/5068 ,  H01L21/32139 ,  H01L22/12 ,  H01L23/5226 ,  H01L27/0207 ,  H01L27/1116 ,  H01L2924/0002 ,  Y02T10/82 ,  H01L2924/00

    Abstract: Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.

    Abstract translation: 公开了形成半导体层的方法，例如金属层，其具有最小宽度特征被隔开大于最小间距的距离，以及所得到的器件。 实施例可以包括确定在半导体层内具有最小宽度的第一形状和第二形状，其中第一形状和第二形状之间的距离大于最小间距，确定第一形状和第二形状之间的中间形状 并且在所述中间形状中指定虚拟形状，其中所述虚拟形状距所述第一形状处于最小间距。

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