- Patent Title: Self-protected metal-oxide-semiconductor field-effect transistor
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Application No.: US14554643Application Date: 2014-11-26
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Publication No.: US09263402B2Publication Date: 2016-02-16
- Inventor: James P. Di Sarro , Robert J. Gauthier, Jr. , Junjun Li
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony J. Canale
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/60 ; H01L27/02 ; H01L29/66 ; H01L21/84 ; H01L27/12 ; H01L29/78
Abstract:
Device structures, design structures, and fabrication methods for a metal-oxide-semiconductor field-effect transistor. A gate structure is formed on a top surface of a substrate. First and second trenches are formed in the substrate adjacent to a sidewall of the gate structure. The second trench is formed laterally between the first trench and the first sidewall. First and second epitaxial layers are respectively formed in the first and second trenches. A contact is formed to the first epitaxial layer, which serves as a drain. The second epitaxial layer in the second trench is not contacted so that the second epitaxial layer serves as a ballasting resistor.
Public/Granted literature
- US20150115364A1 SELF-PROTECTED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR Public/Granted day:2015-04-30
Information query
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