Invention Grant
- Patent Title: Semiconductor device, manufacturing method thereof, and display apparatus
- Patent Title (中): 半导体装置及其制造方法以及显示装置
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Application No.: US14585525Application Date: 2014-12-30
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Publication No.: US09263470B1Publication Date: 2016-02-16
- Inventor: Dongjo Kim , Myounggeun Cha , Yoonho Khang , Soyoung Koo
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2014-0099976 20140804
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/12 ; H01L29/786 ; H01L21/02 ; H01L27/32
Abstract:
Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.
Public/Granted literature
- US20160035754A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS Public/Granted day:2016-02-04
Information query
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