公开(公告)号：US12185604B2

公开(公告)日：2024-12-31

申请号：US17743424

申请日：2022-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Joohee Jeon ,  Sanggun Choi

IPC: H01L27/32 ,  H10K59/124 ,  H10K59/131 ,  H10K59/13

Abstract: A display apparatus for displaying a high-resolution image and having a low occurrence rate of defects caused by a voltage drop. The display apparatus includes a substrate, a first conductive layer arranged on the substrate and including an auxiliary data line extending in a first direction, a first semiconductor layer arranged on the first conductive layer, a first gate layer arranged on the first semiconductor layer, a first connection electrode layer arranged on the first gate layer and including a first connection electrode electrically connected to the first semiconductor layer and the auxiliary data line, and a second connection electrode layer arranged on the first connection electrode layer and including a data line electrically connected to the first connection electrode.

公开(公告)号：US11423839B2

公开(公告)日：2022-08-23

申请号：US17264703

申请日：2019-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yongsu Lee

IPC: G09G3/3258 ,  G09G3/3233 ,  G09G3/3225

Abstract: A display device may include a substrate, an organic light emitting element on the substrate, a pixel circuit between the substrate and the organic light emitting element, electrically connected to the organic light emitting element, and including a first transistor and a second transistor, a first metal layer between the substrate and the pixel circuit, overlapping the first transistor, and configured to receive a first voltage, and a second metal layer between the substrate and the pixel circuit, overlapping the second transistor, and configured to receive a second voltage different from the first voltage.

公开(公告)号：US10755639B2

公开(公告)日：2020-08-25

申请号：US16381491

申请日：2019-04-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yong Su Lee

IPC: G09G3/3233

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

公开(公告)号：US09437624B2

公开(公告)日：2016-09-06

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Dongjo Kim ,  Yoonho Khang ,  Myounghwa Kim ,  Kyoungwon Lee

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。

公开(公告)号：US20160148986A1

公开(公告)日：2016-05-26

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/32 ,  G09G3/32 ,  H01L51/00 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2300/0842 ,  H01L27/3265 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

Abstract translation: 一种晶体管，包括在基底衬底上的多晶硅层，并且包括沟道区，第一离子掺杂区，第二离子掺杂区，沟道区在第一和第二离子掺杂区之间，沟道中的晶粒的平均尺寸 区域大于第一和第二离子掺杂区域中的晶粒的区域，与沟道区域绝缘并且与沟道区域重叠的第一栅极电极，与第一栅电极绝缘并与沟道区域重叠的第二栅极电极，绝缘层 在所述第二栅电极上，在所述绝缘层上并连接到所述第一离子掺杂区的源电极和所述绝缘层上的漏极连接到所述第二离子掺杂区。

公开(公告)号：US20210320278A1

公开(公告)日：2021-10-14

申请号：US17092568

申请日：2020-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Sanggun Choi ,  Yeoungkeol Woo ,  Myounggeun Cha ,  Eunjin Kwak

IPC: H01L51/52 ,  H01L51/56 ,  H01L29/786

Abstract: A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiNx), aluminum oxide (Al2O3), and zirconium oxide (Zr2O3), and having a density ranging from about 2 g/cm3 to about 6 g/cm3.

公开(公告)号：US11063093B2

公开(公告)日：2021-07-13

申请号：US16708894

申请日：2019-12-10

Applicant: Samsung Display Co., Ltd.

Inventor： Heena Kim ,  Myounggeun Cha ,  Sang Jin Park ,  Young Seok Baek

IPC: H01L27/32 ,  H01L51/52

Abstract: An organic light emitting diode display device includes a substrate, a buffer layer, a first circuit structure, a sub-pixel structure, and a first signal wire. The substrate includes a display region including a plurality of sub-pixel regions and a peripheral region surrounding the display region. The buffer layer is disposed in the display region and peripheral region on the substrate. The first circuit structure is disposed in the peripheral region on the buffer layer. The sub-pixel structure is disposed in each of the sub-pixel regions on the first circuit structure. The first signal wire is disposed in the peripheral region between the substrate and the buffer layer, and overlaps the first circuit structure when viewed from a plan view in a thickness direction of the substrate.

公开(公告)号：US10991783B2

公开(公告)日：2021-04-27

申请号：US16573882

申请日：2019-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yongsu Lee

IPC: H01L27/32 ,  G09G3/3258 ,  G09G3/3266 ,  H01L27/12

Abstract: A scan driver includes a substrate, a first transistor on the substrate, the first transistor including a first active pattern and a first gate electrode, the first active pattern including first and second regions, and a first channel region between the first and second regions, a second transistor on the first transistor, the second transistor including a second active pattern and a second gate electrode, the second active pattern including third and fourth regions, and a second channel region between the third and fourth regions, first and second electrodes on the second transistor, the first electrode and the second electrode electrically connected to the first region and the second region, respectively, and third and fourth electrodes on the second transistor, the third electrode and the fourth electrode electrically connected to the third region and the fourth region, respectively, wherein the first and third electrodes are electrically connected.

公开(公告)号：US20210043139A1

公开(公告)日：2021-02-11

申请号：US16897646

申请日：2020-06-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Hyena Kwak ,  Jiyeong Shin ,  Yongsu Lee ,  Kiseok Choi

IPC: G09G3/3233 ,  H01L27/32 ,  G09G3/3266 ,  G09G3/3291

Abstract: A display device includes a first transistor including a first channel region, a first gate electrode overlapping the first channel region, and a first electrode connected to a node receiving a driving voltage, a second transistor electrically connected to the first electrode of the first transistor, the second transistor including a second channel region and a second gate electrode overlapping the first channel region and receiving a scan signal, a light emitting element electrically connected to a second electrode of the first transistor, a first conductive line overlapping the first gate electrode with the first channel region in between and receiving a variable voltage different from the driving voltage, and a second conductive line overlapping the second gate electrode with the second channel region in between and receiving the scan signal.

公开(公告)号：US10916617B2

公开(公告)日：2021-02-09

申请号：US16382634

申请日：2019-04-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yong Su Lee

IPC: H01L29/08 ,  H01L27/32 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  H01L33/06 ,  H01L33/50 ,  H01L27/15

Abstract: A display device including: a substrate; a light emitting element on the substrate; a pixel circuit between the substrate and the light emitting element, wherein the pixel circuit is electrically connected to the light emitting element, and includes a plurality of transistors; and a conductive pattern including an electrode portion and a wiring portion for supplying a voltage to the electrode portion, wherein the electrode portion overlaps an active pattern of at least one transistor among the plurality of transistors, wherein the conductive pattern is disposed between the substrate and the active pattern, and wherein a thickness of the wiring portion is greater than a thickness of the electrode portion.