Invention Grant
US09263550B2 Gate to diffusion local interconnect scheme using selective replacement gate flow
有权
使用选择性替代栅极流扩散局部互连方案的门
- Patent Title: Gate to diffusion local interconnect scheme using selective replacement gate flow
- Patent Title (中): 使用选择性替代栅极流扩散局部互连方案的门
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Application No.: US14255440Application Date: 2014-04-17
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Publication No.: US09263550B2Publication Date: 2016-02-16
- Inventor: Josephine B. Chang , Michael A. Guillorn , Isaac Lauer , Jeffrey W. Sleight
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Louis J. Percello
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/66 ; H01L21/763 ; H01L29/423 ; H01L29/78
Abstract:
A method of fabricating a device is provided which includes selectively implanting one or more dopants into a semiconductor wafer so as to form doped and undoped regions of the wafer; forming fins in the wafer with at least a given one of the fins being formed both from a portion of the doped region of the wafer and from a portion of the undoped region of the wafer; forming dummy gates on the wafer; depositing a filler layer around the dummy gates; removing the dummy gates forming trenches in the filler layer, at least one of which extends down to the undoped portion of the fin and at least another of which extends down to the doped portion of the fin; selectively forming a gate dielectric lining the trenches which extend down to the undoped portion of the fin; and forming replacement gates in the trenches.
Public/Granted literature
- US20150303277A1 Gate to Diffusion Local Interconnect Scheme Using Selective Replacement Gate Flow Public/Granted day:2015-10-22
Information query
IPC分类:
