Invention Grant
US09263582B2 Strain engineering in semiconductor devices by using a piezoelectric material
有权
通过使用压电材料在半导体器件中的应变工程
- Patent Title: Strain engineering in semiconductor devices by using a piezoelectric material
- Patent Title (中): 通过使用压电材料在半导体器件中的应变工程
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Application No.: US14502428Application Date: 2014-09-30
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Publication No.: US09263582B2Publication Date: 2016-02-16
- Inventor: Stephan Kronholz , Maciej Wiatr
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102009010843 20090227
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L27/12 ; H01L27/20 ; H01L21/8234 ; H01L21/8238
Abstract:
An efficient strain-inducing mechanism may be provided on the basis of a piezoelectric material so that performance of different transistor types may be enhanced by applying a single concept. For example, a piezoelectric material may be provided below the active region of different transistor types and may be appropriately connected to a voltage source so as to obtain a desired type of strain.
Public/Granted literature
- US20150054083A1 STRAIN ENGINEERING IN SEMICONDUCTOR DEVICES BY USING A PIEZOELECTRIC MATERIAL Public/Granted day:2015-02-26
Information query
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