Invention Grant
- Patent Title: Oxide transistor with nano-layered structure
- Patent Title (中): 具有纳米级结构的氧化物晶体管
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Application No.: US14020498Application Date: 2013-09-06
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Publication No.: US09263592B2Publication Date: 2016-02-16
- Inventor: Su Jae Lee , Chi-Sun Hwang , Hye Yong Chu , Sang Chul Lim , Jae-Eun Pi , Min Ki Ryu
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2012-0144276 20121212
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L21/02

Abstract:
A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.
Public/Granted literature
- US20140159036A1 OXIDE TRANSISTOR WITH NANO-LAYERED STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-06-12
Information query
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