Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US14154312Application Date: 2014-01-14
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Publication No.: US09263652B2Publication Date: 2016-02-16
- Inventor: Ju-heon Yoon , Gi-bum Kim , Sang-yeon Kim , Sang-yeob Song , Won-goo Hur
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2013-0025751 20130311
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/60 ; H01L33/40 ; H01L33/46
Abstract:
A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.
Public/Granted literature
- US20140252390A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2014-09-11
Information query
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