A resistive memory device includes a switching device disposed on a lower interconnection, a resistor element disposed on the switching device, and an upper interconnection disposed on the resistor element. The switching device includes a diode electrode, a high-concentration lower anode disposed on the diode electrode, a middle-concentration lower anode disposed on the lower high-concentration anode electrode, a common cathode disposed on the middle-concentration lower anode, a low-concentration upper anode disposed on the common cathode, and an high-concentration upper anode disposed on the low-concentration upper anode. The peak dopant concentration of the middle-concentration lower anode is at least 10 times greater than the peak dopant concentration of the low-concentration upper anode.