Invention Grant
US09268690B2 Circuits and methods for providing data to and from arrays of memory cells
有权
用于向存储器单元阵列提供数据的电路和方法
- Patent Title: Circuits and methods for providing data to and from arrays of memory cells
- Patent Title (中): 用于向存储器单元阵列提供数据的电路和方法
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Application No.: US14515849Application Date: 2014-10-16
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Publication No.: US09268690B2Publication Date: 2016-02-23
- Inventor: Shigeki Tomishima
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/00 ; G11C7/02 ; G11C5/14 ; G06F12/06 ; G11C7/10 ; G06F1/26
Abstract:
A memory device uses a global input/output line or a pair of complementary global input/output lines to couple write data signals and read data signals to and from a memory array. The same input/output line or pairs of complementary global input/output lines may be used for coupling both write data signals and read data signals.
Public/Granted literature
- US20150039843A1 CIRCUITS AND METHODS FOR PROVIDING DATA TO AND FROM ARRAYS OF MEMORY CELLS Public/Granted day:2015-02-05
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