Invention Grant
- Patent Title: Latch-based memory array
- Patent Title (中): 基于锁存的存储器阵列
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Application No.: US14051357Application Date: 2013-10-10
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Publication No.: US09269423B2Publication Date: 2016-02-23
- Inventor: Ilan Sever
- Applicant: DOLPHIN INTEGRATION
- Applicant Address: FR
- Assignee: Dolphin Integration
- Current Assignee: Dolphin Integration
- Current Assignee Address: FR
- Agency: Kaplan Breyer Schwarz & Ottesen, LLP
- Priority: FR1259706 20121011
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/412 ; G11C11/418 ; G11C11/419 ; G11C29/08 ; G11C7/22

Abstract:
The invention concerns a memory array having memory cells arranged in columns and rows, the memory cells of each column being coupled to at least one common write line of their column, the memory cells of each row being coupled to a common selection line of their row, wherein each of the memory cells includes a latch formed of a pair of inverters cross-coupled between first and second storage nodes; a first transistor coupled between the first storage node and a first test data input; and a second transistor coupled between the second storage node and a second test data input.
Public/Granted literature
- US20140104936A1 LATCH-BASED MEMORY ARRAY Public/Granted day:2014-04-17
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