This disclosure relates to generating a reference current for a memory device. In one aspect, a non-volatile memory device, such as a phase change memory device, can determine a value of a data digit, such as a bit, stored in a non-volatile memory cell based at least partly on the reference current. The reference current can be generated by mirroring a current at a node that is biased by a voltage bias. A configurable resistance circuit can have a resistance that is configurable. The resistance of the configurable resistance circuit can be in series between the node and a resistive non-volatile memory element. In some embodiments, a plurality of non-volatile memory elements can each be electrically connected in series between the resistance of the configurable resistance circuit and a corresponding selector.