Invention Grant
- Patent Title: Semiconductor isolation structure with air gaps in deep trenches
- Patent Title (中): 半导体隔离结构，深沟槽气隙
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Application No.: US13486265Application Date: 2012-06-01
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Publication No.: US09269609B2Publication Date: 2016-02-23
- Inventor: Hong-Seng Shue , Tai-I Yang , Wei-Ding Wu , Ming-Tai Chung , Shao-Chi Yu
- Applicant: Hong-Seng Shue , Tai-I Yang , Wei-Ding Wu , Ming-Tai Chung , Shao-Chi Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/762 ; H01L21/768 ; H01L29/06 ; H01L21/764
Abstract:
A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate.
Public/Granted literature
- US20130320459A1 Semiconductor Isolation Structure with Air Gaps in Deep Trenches Public/Granted day:2013-12-05
Information query
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