Invention Grant
- Patent Title: Device including a transistor having a stressed channel region and method for the formation thereof
- Patent Title (中): 包括具有应力沟道区的晶体管的器件及其形成方法
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Application No.: US13914288Application Date: 2013-06-10
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Publication No.: US09269714B2Publication Date: 2016-02-23
- Inventor: Stefan Flachowsky , Ralf Illgen , Gerd Zschaezsch
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/092 ; H01L21/8238 ; H01L27/12
Abstract:
A device includes a substrate, a P-channel transistor and an N-channel transistor. The substrate includes a first layer of a first semiconductor material and a second layer of a second semiconductor material. The first and second semiconductor materials have different crystal lattice constants. The P-channel transistor includes a channel region having a compressive stress in a first portion of the substrate. The channel region of the P-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. The N-channel transistor includes a channel region having a tensile stress formed in a second portion of the substrate. The channel region of the N-channel transistor includes a portion of the first layer of the first semiconductor material and a portion of the second layer of the second semiconductor material. Methods of forming the device are also disclosed.
Public/Granted literature
- US20140361335A1 DEVICE INCLUDING A TRANSISTOR HAVING A STRESSED CHANNEL REGION AND METHOD FOR THE FORMATION THEREOF Public/Granted day:2014-12-11
Information query
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