发明授权
- 专利标题: Memory device
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申请号: US14807879申请日: 2015-07-23
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公开(公告)号: US09269721B2公开(公告)日: 2016-02-23
- 发明人: Kwang Soo Seol , JinTae Kang , Seong Soon Cho
- 申请人: Kwang Soo Seol , JinTae Kang , Seong Soon Cho
- 申请人地址: KR
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR
- 代理机构: Renaissance IP Law Group LLP
- 优先权: KR10-2012-0110751 20121005; KR10-2013-0140672 20131119
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/04 ; H01L27/115
摘要:
Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.
公开/授权文献
- US20150325586A1 MEMORY DEVICE 公开/授权日:2015-11-12