Invention Grant
- Patent Title: Image sensor device with improved quantum efficiency
- Patent Title (中): 具有提高量子效率的图像传感器装置
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Application No.: US14329337Application Date: 2014-07-11
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Publication No.: US09269733B2Publication Date: 2016-02-23
- Inventor: Chien-Nan Tu , Yu-Lung Yeh , Hsing-Chih Lin , Chien-Chang Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/146

Abstract:
A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.
Public/Granted literature
- US20160013232A1 IMAGE SENSOR DEVICE WITH IMPROVED QUANTUM EFFICIENCY Public/Granted day:2016-01-14
Information query
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