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US09269733B2 Image sensor device with improved quantum efficiency 有权
具有提高量子效率的图像传感器装置

Image sensor device with improved quantum efficiency
Abstract:
A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.
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