发明授权
- 专利标题: Semiconductor component including a short-circuit structure
- 专利标题(中): 半导体元件包括短路结构
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申请号: US12324309申请日: 2008-11-26
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公开(公告)号: US09269769B2公开(公告)日: 2016-02-23
- 发明人: Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
- 申请人: Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Dicke, Billig & Czaja, PLLC
- 优先权: DE102007057728 20071130
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/08 ; H01L29/165 ; H01L29/66 ; H01L29/739 ; H01L29/74
摘要:
A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
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