Invention Grant
- Patent Title: Circuit structures, memory circuitry, and methods
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Application No.: US14287659Application Date: 2014-05-27
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Publication No.: US09269795B2Publication Date: 2016-02-23
- Inventor: John K. Zahurak , Sanh D. Tang , Lars P. Heineck , Martin C. Roberts , Wolfgang Mueller , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/12 ; H01L21/84 ; H01L29/78 ; H01L27/108 ; H01L45/00 ; H01L27/24

Abstract:
A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator material over first semiconductor material, conductive material over the insulator material, and second semiconductor material over the conductive material. The array region includes vertical circuit devices which include the second semiconductor material. The peripheral region includes horizontal circuit devices which include the second semiconductor material. The horizontal circuit devices in the peripheral region individually have a floating body which includes the second semiconductor material. The conductive material in the peripheral region is under and electrically coupled to the second semiconductor material of the floating bodies. Conductive straps in the array region are under the vertical circuit devices. The conductive straps include the conductive material and individually are electrically coupled to a plurality of the vertical circuit devices in the array region. Other implementations are disclosed.
Public/Granted literature
- US20140273358A1 Circuit Structures, Memory Circuitry, And Methods Public/Granted day:2014-09-18
Information query
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