Invention Grant
- Patent Title: Semiconductor device and method of making the same
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Application No.: US14716200Application Date: 2015-05-19
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Publication No.: US09269807B2Publication Date: 2016-02-23
- Inventor: Albert Birner , Helmut Brech
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L21/265 ; H01L29/66 ; H01L29/08 ; H01L29/161 ; H01L29/167 ; H01L29/04 ; H01L29/40 ; H01L29/417
Abstract:
A semiconductor device includes a drift region in a first region of a semiconductor body. The drift region includes dopants of a first conductivity type. A dopant retarding region is formed at least adjacent an edge of the drift region. Dopants of a second conductivity type are implanted into the semiconductor body. The semiconductor body is annealed to form a body region so that dopants of the second conductivity type are driven into the semiconductor body at a first diffusion rate. The dopant retarding region prevents the dopants from diffusing into the drift region at the first diffusion rate.
Public/Granted literature
- US20150255597A1 Semiconductor Device and Method of Making the Same Public/Granted day:2015-09-10
Information query
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