Invention Grant
US09270248B2 Impedance matching network with improved quality factor and method for matching an impedance
有权
阻抗匹配网络具有改进的质量因素和匹配阻抗的方法
- Patent Title: Impedance matching network with improved quality factor and method for matching an impedance
- Patent Title (中): 阻抗匹配网络具有改进的质量因素和匹配阻抗的方法
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Application No.: US13651174Application Date: 2012-10-12
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Publication No.: US09270248B2Publication Date: 2016-02-23
- Inventor: Winfried Bakalski , Anthony Thomas
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H03H7/38
- IPC: H03H7/38 ; H01Q1/50 ; H01L29/417 ; H01L29/423 ; H01L23/66 ; H01L27/06 ; H01L27/08 ; H04B1/18 ; H04B1/04 ; H01L27/12

Abstract:
An impedance matching network comprises a first and a second signal terminal and a reference potential terminal. The network further comprises a first shunt branch between the first signal terminal and the reference potential terminal, the first shunt branch comprising a variable inductive element and a first capacitive element. The impedance matching network also comprises a second shunt branch between the second signal terminal and the reference potential terminal and comprising a second capacitive element. A series branch between the first signal terminal and the second signal terminal comprises a third capacitive element. Optionally, the first, second, and/or third capacitive element may be implemented as a variable capacitive element. The variable capacitive element comprises a plurality of transistors, wherein a combination of off-capacitances Coff of the transistors provide an overall capacitance of the variable capacitive element as a function of at least two independent transistor control signals.
Public/Granted literature
- US20140104132A1 Impedance Matching Network with Improved Quality Factor and Method for Matching an Impedance Public/Granted day:2014-04-17
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