Invention Grant
- Patent Title: Mechanisms for controlling gas flow in enclosure
- Patent Title (中): 控制外壳气体流动的机理
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Application No.: US14051532Application Date: 2013-10-11
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Publication No.: US09272315B2Publication Date: 2016-03-01
- Inventor: You-Hua Chou , Kuo-Sheng Chuang , Yii-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: B08B17/00
- IPC: B08B17/00 ; B01D46/44 ; F24F3/16 ; H01L21/67

Abstract:
Embodiments of mechanisms for controlling a gas flow in an interface module are provided. A method for controlling a gas flow in an enclosure includes providing the enclosure which is capable of containing a substrate. The method also includes providing a gas into the enclosure. The method further includes cleaning the gas. In addition, the method includes actuating the gas to generate the gas flow, and the gas flow passes through the substrate when the substrate is located in the enclosure.
Public/Granted literature
- US20150101482A1 MECHANISMS FOR CONTROLLING GAS FLOW IN ENCLOSURE Public/Granted day:2015-04-16
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