Invention Grant
- Patent Title: Metal redistribution layer for molded substrates
- Patent Title (中): 用于模塑基材的金属再分布层
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Application No.: US14043138Application Date: 2013-10-01
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Publication No.: US09275878B2Publication Date: 2016-03-01
- Inventor: Ulrich Wachter , Dominic Maier , Thomas Kilger
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/56 ; H01L21/768 ; H01L23/31 ; H01L23/00

Abstract:
Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate and covering the semiconductor dies with a molding compound to form a molded structure. The support substrate is then removed from the molded structure to expose the side of the semiconductor dies with the terminals, and a metal redistribution layer is formed on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound. The redistribution layer is formed without first forming a dielectric layer on a side of the molded structure with the terminals of the semiconductor dies. A corresponding molded substrate and individual molded semiconductor packages are also disclosed.
Public/Granted literature
- US20150091171A1 Metal Redistribution Layer for Molded Substrates Public/Granted day:2015-04-02
Information query
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