Invention Grant
US09275906B2 Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads
有权
通过形成多个外延头来增加混合N / P型鳍式半导体结构中的外延结构的表面积的方法
- Patent Title: Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads
- Patent Title (中): 通过形成多个外延头来增加混合N / P型鳍式半导体结构中的外延结构的表面积的方法
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Application No.: US14267611Application Date: 2014-05-01
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Publication No.: US09275906B2Publication Date: 2016-03-01
- Inventor: Xusheng Wu , Xiang Hu , Changyong Xiao , Wanxun He
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/306 ; H01L21/02 ; H01L27/092 ; H01L29/161 ; H01L29/16 ; H01L29/201
Abstract:
A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.
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