Invention Grant
- Patent Title: Capacitor structure and method of manufacturing the same
- Patent Title (中): 电容器结构及其制造方法
-
Application No.: US14165535Application Date: 2014-01-27
-
Publication No.: US09276057B2Publication Date: 2016-03-01
- Inventor: Duan Quan Liao , Yikun Chen , Ching Hwa Tey , Xiao Zhong Zhu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L49/02 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L27/108
Abstract:
A capacitor structure includes a substrate with a plurality of dielectric layers sequentially formed thereon, a trench formed in the dielectric layers, wherein the trench is composed of at least two interconnected dual damascene recesses, each dual damascene recess formed in one dielectric layer; and a capacitor multilayer disposed on the sidewall of the trench.
Public/Granted literature
- US20150214293A1 CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-07-30
Information query
IPC分类:
