Invention Grant
- Patent Title: Manufacturing semiconductor device with film for forming protective layer
- Patent Title (中): 制造具有形成保护层的膜的半导体器件
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Application No.: US13855629Application Date: 2013-04-02
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Publication No.: US09279064B2Publication Date: 2016-03-08
- Inventor: Takashi Oda , Naohide Takamoto , Takeshi Matsumura
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki-shi
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2011-029879 20110215
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C09D171/08 ; H01L23/00 ; H01L21/78 ; H01L23/31

Abstract:
The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.
Public/Granted literature
- US20130217187A1 FILM FOR FORMING PROTECTIVE LAYER Public/Granted day:2013-08-22
Information query
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