Invention Grant
US09281204B2 Method for improving E-beam lithography gate metal profile for enhanced field control
有权
用于改进电子束光刻栅极金属型材以增强现场控制的方法
- Patent Title: Method for improving E-beam lithography gate metal profile for enhanced field control
- Patent Title (中): 用于改进电子束光刻栅极金属型材以增强现场控制的方法
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Application No.: US14259813Application Date: 2014-04-23
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Publication No.: US09281204B2Publication Date: 2016-03-08
- Inventor: Karen E. Moore , Bruce M. Green
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/285 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L29/20
Abstract:
A semiconductor device is provided which includes a GaN-on-SiC substrate (50-51) and a multi-layer passivation stack (52-54) in which patterned step openings (76) are defined and filled with gate metal layers using a lift-off gate metal process to form a T-gate electrode (74) as a stepped gate electrode having sidewall extensions and a contact base portion with one or more gate ledges.
Public/Granted literature
- US20150311084A1 Method for Improving E-Beam Lithography Gate Metal Profile for Enhanced Field Control Public/Granted day:2015-10-29
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