Invention Grant
- Patent Title: MIT transistor system including critical current supply device
- Patent Title (中): MIT晶体管系统包括临界电流供应装置
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Application No.: US14322223Application Date: 2014-07-02
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Publication No.: US09281812B2Publication Date: 2016-03-08
- Inventor: Hyun-Tak Kim
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2013-0078913 20130705; KR10-2013-0156332 20131216
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/30 ; H03K17/567 ; H03K17/60
Abstract:
Provided is a metal-insulator transition (MIT) transistor system including an MIT critical current supply device allowing MIT to occur between a control terminal and an outlet terminal of an MIT transistor for easily and conveniently driving the MIT transistor. A current supplier according to the present invention provides a critical current for allowing an MIT phenomenon to occur between the control terminal and the output terminal of the MIT transistor.
Public/Granted literature
- US20150008974A1 MIT TRANSISTOR SYSTEM INCLUDING CRITICAL CURRENT SUPPLY DEVICE Public/Granted day:2015-01-08
Information query
IPC分类:
