Invention Grant
- Patent Title: Low power sense amplifier for static random access memory
- Patent Title (中): 用于静态随机存取存储器的低功率读出放大器
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Application No.: US14317806Application Date: 2014-06-27
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Publication No.: US09286969B2Publication Date: 2016-03-15
- Inventor: Pankaj Agarwal , Shiju K. Kandiyil , Krishnan S. Rengarajan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419

Abstract:
A low power sense amplifier for an SRAM is described. A first pass gate transistor is driven by bit line true and a second pass gate transistor is driven by bit line complement. A first pull down transistor driven by the bit line complement is coupled to the first pass gate transistor, and a second pull down transistor driven by the bit line true is coupled to the second pass gate transistor. A data line true is coupled to a node coupling the first pass gate transistor with the first pull down transistor and a data line complement is coupled to a node coupling the second pass gate transistor with the second pull down transistor. A current cut-off device cuts off parasitic current from flowing through the first pass gate transistor and the first pull down transistor and through the second pass gate transistor and the second pull down transistor.
Public/Granted literature
- US20150380079A1 LOW POWER SENSE AMPLIFIER FOR STATIC RANDOM ACCESS MEMORY Public/Granted day:2015-12-31
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