Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14473489Application Date: 2014-08-29
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Publication No.: US09286977B2Publication Date: 2016-03-15
- Inventor: Shuichi Tsukada
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-178337 20130829
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L27/24

Abstract:
A semiconductor device including: a resistive memory element; a data line electrically coupled to the resistive memory element; a control line; a power supply line; and a control circuit including a first constant current element, a first transistor, and a second transistor. In the control circuit, the first transistor has a gate coupled to the data line, one of a source and a drain coupled to the first constant current element, and the other one of the source and the drain coupled to the power supply line. The second transistor has a gate coupled to one of the source and the drain of the first transistor, one of a source and a drain coupled to the data line, and the other one of the source and the drain coupled to the control line.
Public/Granted literature
- US20150063003A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
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