A nonvolatile semiconductor device is provided that includes a substrate and a plurality of blocks forming a string. Each block is positioned on the substrate and includes a plurality of word lines disposed on the substrate. The string includes a single ground select line disposed at one side of the plurality of blocks, and a single string select line is disposed at another side of the plurality of blocks. In some embodiments, the word lines of the plurality of blocks define gaps separating each block of the string from neighboring blocks of the string. One or more dummy word lines may be disposed in each gap between blocks of the string. Corresponding methods of manufacturing the nonvolatile semiconductor device and manipulating the nonvolatile semiconductor device are provided.