Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14295333Application Date: 2014-06-04
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Publication No.: US09287265B2Publication Date: 2016-03-15
- Inventor: Jong-Kook Park , Hongsoo Kim , Won-Chul Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0104375 20130830
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L27/06 ; H01L23/485

Abstract:
A semiconductor device includes a substrate with an active region defined by a device isolation layer. A word line extends over the active region in a first direction, and a plurality of interconnections extends over the word line in a second direction perpendicular to the first direction. A contact pad is disposed between and spaced apart from the word line and the plurality of interconnections, extending in the first direction to overlap the plurality of interconnections and the active region when viewed from a plan view. A lower contact plug electrically connects the contact pad to the active region. An upper contact plug electrically connects the contact pad to one of the plurality of interconnections.
Public/Granted literature
- US20150035065A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-02-05
Information query
IPC分类: