发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US13484670申请日： 2012-05-31
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公开(公告)号： US09287407B2公开(公告)日： 2016-03-15
- 发明人: Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
- 申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2011-129976 20110610
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L29/786 ; H01L29/66
摘要：
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
公开/授权文献
- US20120315730A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2012-12-13
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