Invention Grant
- Patent Title: Display device and manufacturing method thereof
- Patent Title (中): 显示装置及其制造方法
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Application No.: US13717914Application Date: 2012-12-18
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Publication No.: US09287436B2Publication Date: 2016-03-15
- Inventor: Sang Youn Han , Cheol Kyu Kim , Jun Ho Song , Sung Hoon Yang , Kyung Tea Park , Seung Mi Seo , Suk Won Jung , Do Young Kim , Sun Jo Kim , Hyung Jun Kim
- Applicant: SAMSUNG DISPLAY CO., LTD. , INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY , ULSAN COLLEGE INDUSTRY COOPERATION
- Applicant Address: KR KR KR
- Assignee: SAMSUNG DISPLAY CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY,ULSAN COLLEGE INDUSTRY COOPERATION
- Current Assignee: SAMSUNG DISPLAY CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY,ULSAN COLLEGE INDUSTRY COOPERATION
- Current Assignee Address: KR KR KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2012-0078428 20120718
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L27/144 ; H01L27/146

Abstract:
A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.
Public/Granted literature
- US20140021518A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-01-23
Information query
IPC分类: