发明授权
US09287458B2 Semiconductor light emitting diode and method of producing the same 有权
半导体发光二极管及其制造方法

Semiconductor light emitting diode and method of producing the same
摘要:
A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.
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