发明授权
- 专利标题: Semiconductor light emitting diode and method of producing the same
- 专利标题(中): 半导体发光二极管及其制造方法
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申请号: US13148777申请日: 2010-02-08
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公开(公告)号: US09287458B2公开(公告)日: 2016-03-15
- 发明人: Hiroyuki Togawa , Masayuki Nakano , Hidetaka Yamada
- 申请人: Hiroyuki Togawa , Masayuki Nakano , Hidetaka Yamada
- 申请人地址: JP Tokyo
- 专利权人: DOWA ELECTRONICS MATERIALS CO., LTD.
- 当前专利权人: DOWA ELECTRONICS MATERIALS CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2009-028455 20090210
- 国际申请: PCT/JP2010/000736 WO 20100208
- 国际公布: WO2010/092781 WO 20100819
- 主分类号: H01L33/38
- IPC分类号: H01L33/38 ; H01L33/62 ; H01L33/00
摘要:
A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.
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