Invention Grant
- Patent Title: Memory cells and methods of forming memory cells
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Application No.: US14844429Application Date: 2015-09-03
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Publication No.: US09287500B2Publication Date: 2016-03-15
- Inventor: Martin Schubert , Scott E. Sills , Durai Vishak Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Some embodiments include a memory cell having an electrode and a switching material over the electrode. The electrode is a first composition which includes a first metal and a second metal. The switching material is a second composition which includes the second metal. The second composition is directly against the first composition. Some embodiments include methods of forming memory cells.
Public/Granted literature
- US20150380645A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2015-12-31
Information query
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