发明授权
US09287841B2 Gain control circuit and method capable of easing leakage current influence
有权
增益控制电路和方法能够缓解漏电流的影响
- 专利标题: Gain control circuit and method capable of easing leakage current influence
- 专利标题(中): 增益控制电路和方法能够缓解漏电流的影响
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申请号: US14334498申请日: 2014-07-17
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公开(公告)号: US09287841B2公开(公告)日: 2016-03-15
- 发明人: Ming-Cheng Chiang , Yuan-Ping Hsu , Li-Lung Kao
- 申请人: REALTEK SEMICONDUCTOR CORPORATION
- 申请人地址: TW Hsinchu
- 专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT, P.C.
- 代理商 Anthony King
- 优先权: TW102129373A 20130815
- 主分类号: H03G3/20
- IPC分类号: H03G3/20 ; H03G1/00 ; H03F3/45
摘要:
The present invention discloses a gain control circuit capable of easing leakage current influence. According to an embodiment of the present invention, the gain control circuit comprises: at least one signal input end for receiving at least one input signal; a signal output end for outputting an output signal; an amplifier coupled between an amplifier input end and the signal output end; and a plurality of gain schemes. Each of the gain schemes is set between the at least one signal input end and the signal output end; and when one of the gain schemes is activated to generate the output signal, the rest gain schemes are inactivated to stop gain production and concurrently discharge leakage currents through their respective grounding paths.
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