Multi-threshold CMOS (MTCMOS) sequential circuits are presented with a first latch circuit formed of transistors with threshold voltages in a first range, along with a second latch circuit with inverters and a transfer gate formed of higher threshold voltage transistors for low-power retention of data from the first latch with power switching circuitry to selectively decouple inverters of the second latch circuit from a voltage supply during low-power retention mode operation of the sequential circuit.