Invention Grant
US09291669B2 Semiconductor device, test structure of the semiconductor device, and method of testing the semiconductor device
有权
半导体器件，半导体器件的测试结构以及半导体器件的测试方法
- Patent Title: Semiconductor device, test structure of the semiconductor device, and method of testing the semiconductor device
- Patent Title (中): 半导体器件，半导体器件的测试结构以及半导体器件的测试方法
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Application No.: US14471835Application Date: 2014-08-28
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Publication No.: US09291669B2Publication Date: 2016-03-22
- Inventor: Jin-Myoung Lee , Il-Kwon Lee , Jun-Woo Lee , Sang-Goo Jung , Kyoung-Mi Park , In-Ae Lee
- Applicant: Jin-Myoung Lee , Il-Kwon Lee , Jun-Woo Lee , Sang-Goo Jung , Kyoung-Mi Park , In-Ae Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0125735 20131022
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G01R31/28
Abstract:
A semiconductor device, a test structure of the semiconductor device, and a method of testing the semiconductor device are provided. The test structure including a first pad and a second pad being separated from each other, and a first test element and a second test element connected between the first pad and the second pad, a first value of a characteristic parameter of the first test element being different from a second value of the characteristic parameter of the second test element, may be provided.
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