Invention Grant
US09292425B2 Semiconductor memory device with operation functions to be used during a modified read or write mode
有权
具有操作功能的半导体存储器件在修改的读取/写入模式期间被使用
- Patent Title: Semiconductor memory device with operation functions to be used during a modified read or write mode
- Patent Title (中): 具有操作功能的半导体存储器件在修改的读取/写入模式期间被使用
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Application No.: US13966585Application Date: 2013-08-14
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Publication No.: US09292425B2Publication Date: 2016-03-22
- Inventor: Hyojin Choi , Chulwoo Park , Uksong Kang , Haksoo Yu
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0100513 20120911
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C7/10 ; G11C11/4076

Abstract:
A semiconductor memory device performs a modified read operation or a modified write operation. The semiconductor memory device includes a memory cell array, a read circuit, and a write circuit. The semiconductor memory device further includes an operation unit performing an operation on read data obtained by the read circuit according to operation assignment information applied through an address line to reduce memory access time when entering a modified read mode. In addition, the semiconductor memory device may optionally manage a normal read mode and the modified read mode and allow operation result data output from the operation unit to be written by the write circuit in the modified read mode.
Public/Granted literature
- US20140075135A1 SEMICONDUCTOR MEMORY DEVICE WITH OPERATION FUNCTIONS Public/Granted day:2014-03-13
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