Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14258107Application Date: 2014-04-22
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Publication No.: US09293336B2Publication Date: 2016-03-22
- Inventor: Sangryol Yang , Soonwook Jung , Kyoungseob Kim , Youngsub You , Byunghong Chung , Hanmei Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0045183 20130424
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/283 ; H01L21/768
Abstract:
A semiconductor device includes a storage node contact on a substrate, and a lower electrode on the storage node contact, a lower sidewall of the lower electrode being covered by a contact residue of a same material as the storage node contact.
Public/Granted literature
- US20140319690A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-10-30
Information query
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