Invention Grant
US09293448B2 Methods of forming three-dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates 有权
形成三维集成半导体系统的方法,包括光敏元件和绝缘体上半导体衬底

  • Patent Title: Methods of forming three-dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
  • Patent Title (中): 形成三维集成半导体系统的方法,包括光敏元件和绝缘体上半导体衬底
  • Application No.: US14474503
    Application Date: 2014-09-02
  • Publication No.: US09293448B2
    Publication Date: 2016-03-22
  • Inventor: Bich-Yen NguyenMariam Sadaka
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: SOITEC
  • Current Assignee: SOITEC
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Main IPC: G02B6/12
  • IPC: G02B6/12 H01L25/16 H01L31/103 H01L27/06 H01L27/12 H01L33/34
Methods of forming three-dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
Abstract:
Three-dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.
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