Invention Grant
US09293461B2 Replacement metal gate structures for effective work function control
有权
更换金属门结构,实现有效的工作功能控制
- Patent Title: Replacement metal gate structures for effective work function control
- Patent Title (中): 更换金属门结构,实现有效的工作功能控制
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Application No.: US13780003Application Date: 2013-02-28
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Publication No.: US09293461B2Publication Date: 2016-03-22
- Inventor: Unoh Kwon , Michael P. Chudzik , Ravikumar Ramachandran
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238

Abstract:
A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.
Public/Granted literature
- US20130175635A1 REPLACEMENT METAL GATE STRUCTURES FOR EFFECTIVE WORK FUNCTION CONTROL Public/Granted day:2013-07-11
Information query
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