Invention Grant
US09293490B2 Deep trench isolation with air-gap in backside illumination image sensor chips
有权
背面照明图像传感器芯片具有气隙的深沟槽隔离
- Patent Title: Deep trench isolation with air-gap in backside illumination image sensor chips
- Patent Title (中): 背面照明图像传感器芯片具有气隙的深沟槽隔离
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Application No.: US14213542Application Date: 2014-03-14
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Publication No.: US09293490B2Publication Date: 2016-03-22
- Inventor: Volume Chien , Yu-Heng Cheng , Huan-En Lin , Chi-Cherng Jeng , Fu-Tsun Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.
Public/Granted literature
- US20150263054A1 DEEP TRENCH ISOLATION WITH AIR-GAP IN BACKSIDE ILLUMINATION IMAGE SENSOR CHIPS Public/Granted day:2015-09-17
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