Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14278705Application Date: 2014-05-15
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Publication No.: US09293599B2Publication Date: 2016-03-22
- Inventor: Suguru Hondo , Daigo Ito
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2013-106165 20130520
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L29/66 ; H01L23/31 ; H01L29/423

Abstract:
A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film.
Public/Granted literature
- US20140339547A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-11-20
Information query
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