Invention Grant
US09293599B2 Semiconductor device and method for manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and method for manufacturing the same
Abstract:
A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film.
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