Invention Grant
US09293700B2 Nonvolatile memory cell and nonvolatile memory device including the same
有权
非易失性存储单元和包括其的非易失性存储器件
- Patent Title: Nonvolatile memory cell and nonvolatile memory device including the same
- Patent Title (中): 非易失性存储单元和包括其的非易失性存储器件
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Application No.: US14301845Application Date: 2014-06-11
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Publication No.: US09293700B2Publication Date: 2016-03-22
- Inventor: Hyun-Su Ju , Min-Kyu Yang , Eun-Mi Kim , Seong-Geon Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0012447 20120207
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.
Public/Granted literature
- US20140291605A1 NONVOLATILE MEMORY CELL AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2014-10-02
Information query
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