公开(公告)号：US20190189920A1

公开(公告)日：2019-06-20

申请号：US16277491

申请日：2019-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hideki Horii ,  Seong-Geon Park ,  Dong-Ho Ahn ,  Jung-Moo Lee

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1683 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144

Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

公开(公告)号：US09293700B2

公开(公告)日：2016-03-22

申请号：US14301845

申请日：2014-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Su Ju ,  Min-Kyu Yang ,  Eun-Mi Kim ,  Seong-Geon Park

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1253 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract translation: 根据示例性实施例，非易失性存储单元包括第一电极和第二电极，第一电极和第二电极之间的电阻变化膜以及与第二电极接触的第一阻挡膜。 抗蚀剂改变膜含有氧离子并与第一电极接触。 第一阻挡膜被配置为减少（和/或阻挡）来自电阻变化膜的氧离子的流出。

公开(公告)号：US10236444B2

公开(公告)日：2019-03-19

申请号：US15432346

申请日：2017-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hideki Horii ,  Seong-Geon Park ,  Dong-Ho Ahn ,  Jung-Moo Lee

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.